Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer

Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer

10.1109/VLSIT.2012.6242479

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Main Authors: Han, G., Su, S., Wang, L., Wang, W., Gong, X., Yang, Y., Ivana, Guo, P., Guo, C., Zhang, G., Pan, J., Zhang, Z., Xue, C., Cheng, B., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84231
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-842312024-11-08T19:06:12Z Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer Han, G. Su, S. Wang, L. Wang, W. Gong, X. Yang, Y. Ivana Guo, P. Guo, C. Zhang, G. Pan, J. Zhang, Z. Xue, C. Cheng, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSIT.2012.6242479 Digest of Technical Papers - Symposium on VLSI Technology 97-98 DTPTE 2014-10-07T04:50:18Z 2014-10-07T04:50:18Z 2012 Conference Paper Han, G.,Su, S.,Wang, L.,Wang, W.,Gong, X.,Yang, Y.,Ivana,Guo, P.,Guo, C.,Zhang, G.,Pan, J.,Zhang, Z.,Xue, C.,Cheng, B.,Yeo, Y.-C. (2012). Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer. Digest of Technical Papers - Symposium on VLSI Technology : 97-98. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSIT.2012.6242479" target="_blank">https://doi.org/10.1109/VLSIT.2012.6242479</a> 9781467308458 07431562 http://scholarbank.nus.edu.sg/handle/10635/84231 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/VLSIT.2012.6242479
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Han, G.
Su, S.
Wang, L.
Wang, W.
Gong, X.
Yang, Y.
Ivana
Guo, P.
Guo, C.
Zhang, G.
Pan, J.
Zhang, Z.
Xue, C.
Cheng, B.
Yeo, Y.-C.
format Conference or Workshop Item
author Han, G.
Su, S.
Wang, L.
Wang, W.
Gong, X.
Yang, Y.
Ivana
Guo, P.
Guo, C.
Zhang, G.
Pan, J.
Zhang, Z.
Xue, C.
Cheng, B.
Yeo, Y.-C.
spellingShingle Han, G.
Su, S.
Wang, L.
Wang, W.
Gong, X.
Yang, Y.
Ivana
Guo, P.
Guo, C.
Zhang, G.
Pan, J.
Zhang, Z.
Xue, C.
Cheng, B.
Yeo, Y.-C.
Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer
author_sort Han, G.
title Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer
title_short Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer
title_full Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer
title_fullStr Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer
title_full_unstemmed Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer
title_sort strained germanium-tin (gesn) n-channel mosfets featuring low temperature n +/p junction formation and gesno 2 interfacial layer
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84231
_version_ 1821206480481681408

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