Han, G., Su, S., Wang, L., Wang, W., Gong, X., Yang, Y., . . . ENGINEERING, E. &. C. (2014). Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layer.
استشهاد بنمط شيكاغوHan, G., et al. Strained Germanium-tin (GeSn) N-channel MOSFETs Featuring Low Temperature N +/P Junction Formation and GeSnO 2 Interfacial Layer. 2014.
MLA استشهادHan, G., et al. Strained Germanium-tin (GeSn) N-channel MOSFETs Featuring Low Temperature N +/P Junction Formation and GeSnO 2 Interfacial Layer. 2014.
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