Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation

• Main Authors: Guo, P., Zhan, C., Yang, Y., Gong, X., Liu, B., Cheng, R., Wang, W., Pan, J., Zhang, Z., Tok, E.S., Han, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83764
• Institution: National University of Singapore

10.1109/VLSI-TSA.2013.6545615