Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation

• Main Authors: Guo, P., Zhan, C., Yang, Y., Gong, X., Liu, B., Cheng, R., Wang, W., Pan, J., Zhang, Z., Tok, E.S., Han, G., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83764
• 機構: National University of Singapore

10.1109/VLSI-TSA.2013.6545615