Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation

10.1109/VLSI-TSA.2013.6545615

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Bibliographic Details
Main Authors: Guo, P., Zhan, C., Yang, Y., Gong, X., Liu, B., Cheng, R., Wang, W., Pan, J., Zhang, Z., Tok, E.S., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83764
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Institution: National University of Singapore
Description
Summary:10.1109/VLSI-TSA.2013.6545615