Strain relaxation of germanium-tin (GeSn) fins

10.1063/1.5012559

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Bibliographic Details
Main Authors:	Kang, Y, Huang, Y.-C, Lee, K.H, Bao, S, Wang, W, Lei, D, Masudy-Panah, S, Dong, Y, Wu, Y, Xu, S, Tan, C.S, Gong, X, Yeo, Y.-C
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Published:	2020
Subjects:	Electron beam lithography Finite element method Fins (heat exchange) Raman spectroscopy Strain relaxation Wafer bonding Direct wafer bonding Fin structures Finite element simulations Germanium tins Micro Raman Spectroscopy Raman measurements Strain components Transverse strain Tin alloys
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/176058
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Institution:	National University of Singapore

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