Strain relaxation of germanium-tin (GeSn) fins

• Main Authors: Kang, Y, Huang, Y.-C, Lee, K.H, Bao, S, Wang, W, Lei, D, Masudy-Panah, S, Dong, Y, Wu, Y, Xu, S, Tan, C.S, Gong, X, Yeo, Y.-C
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Format: Article
• Published: 2020
• Subjects: Electron beam lithography; Finite element method; Fins (heat exchange); Raman spectroscopy; Strain relaxation; Wafer bonding; Direct wafer bonding; Fin structures; Finite element simulations; Germanium tins; Micro Raman Spectroscopy; Raman measurements; Strain components; Transverse strain; Tin alloys
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/176058
• Institution: National University of Singapore

10.1063/1.5012559