Strain relaxation of germanium-tin (GeSn) fins

10.1063/1.5012559

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Bibliographic Details
Main Authors:	Kang, Y, Huang, Y.-C, Lee, K.H, Bao, S, Wang, W, Lei, D, Masudy-Panah, S, Dong, Y, Wu, Y, Xu, S, Tan, C.S, Gong, X, Yeo, Y.-C
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Published:	2020
Subjects:	Electron beam lithography Finite element method Fins (heat exchange) Raman spectroscopy Strain relaxation Wafer bonding Direct wafer bonding Fin structures Finite element simulations Germanium tins Micro Raman Spectroscopy Raman measurements Strain components Transverse strain Tin alloys
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/176058
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-176058
record_format	dspace
spelling	sg-nus-scholar.10635-1760582023-10-31T21:41:37Z Strain relaxation of germanium-tin (GeSn) fins Kang, Y Huang, Y.-C Lee, K.H Bao, S Wang, W Lei, D Masudy-Panah, S Dong, Y Wu, Y Xu, S Tan, C.S Gong, X Yeo, Y.-C DEPT OF ELECTRICAL & COMPUTER ENGG Electron beam lithography Finite element method Fins (heat exchange) Raman spectroscopy Strain relaxation Wafer bonding Direct wafer bonding Fin structures Finite element simulations Germanium tins Micro Raman Spectroscopy Raman measurements Strain components Transverse strain Tin alloys 10.1063/1.5012559 AIP Advances 8 2 25111 2020-09-14T07:55:17Z 2020-09-14T07:55:17Z 2018 Article Kang, Y, Huang, Y.-C, Lee, K.H, Bao, S, Wang, W, Lei, D, Masudy-Panah, S, Dong, Y, Wu, Y, Xu, S, Tan, C.S, Gong, X, Yeo, Y.-C (2018). Strain relaxation of germanium-tin (GeSn) fins. AIP Advances 8 (2) : 25111. ScholarBank@NUS Repository. https://doi.org/10.1063/1.5012559 2158-3226 https://scholarbank.nus.edu.sg/handle/10635/176058 Unpaywall 20200831
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electron beam lithography Finite element method Fins (heat exchange) Raman spectroscopy Strain relaxation Wafer bonding Direct wafer bonding Fin structures Finite element simulations Germanium tins Micro Raman Spectroscopy Raman measurements Strain components Transverse strain Tin alloys
spellingShingle	Electron beam lithography Finite element method Fins (heat exchange) Raman spectroscopy Strain relaxation Wafer bonding Direct wafer bonding Fin structures Finite element simulations Germanium tins Micro Raman Spectroscopy Raman measurements Strain components Transverse strain Tin alloys Kang, Y Huang, Y.-C Lee, K.H Bao, S Wang, W Lei, D Masudy-Panah, S Dong, Y Wu, Y Xu, S Tan, C.S Gong, X Yeo, Y.-C Strain relaxation of germanium-tin (GeSn) fins
description	10.1063/1.5012559
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Kang, Y Huang, Y.-C Lee, K.H Bao, S Wang, W Lei, D Masudy-Panah, S Dong, Y Wu, Y Xu, S Tan, C.S Gong, X Yeo, Y.-C
format	Article
author	Kang, Y Huang, Y.-C Lee, K.H Bao, S Wang, W Lei, D Masudy-Panah, S Dong, Y Wu, Y Xu, S Tan, C.S Gong, X Yeo, Y.-C
author_sort	Kang, Y
title	Strain relaxation of germanium-tin (GeSn) fins
title_short	Strain relaxation of germanium-tin (GeSn) fins
title_full	Strain relaxation of germanium-tin (GeSn) fins
title_fullStr	Strain relaxation of germanium-tin (GeSn) fins
title_full_unstemmed	Strain relaxation of germanium-tin (GeSn) fins
title_sort	strain relaxation of germanium-tin (gesn) fins
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/176058
_version_	1781792228101849088

Strain relaxation of germanium-tin (GeSn) fins

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