Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs

10.1109/VTSA.2008.4530830

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Bibliographic Details
Main Authors:	Wang, G.H., Toh, E.-H., Chan, T.K., Osipowicz, T., Foo, Y.-L., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84127
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84127
record_format	dspace
spelling	sg-nus-scholar.10635-841272023-10-25T22:27:01Z Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs Wang, G.H. Toh, E.-H. Chan, T.K. Osipowicz, T. Foo, Y.-L. Tung, C.H. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2008.4530830 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 128-129 2014-10-07T04:49:07Z 2014-10-07T04:49:07Z 2008 Conference Paper Wang, G.H., Toh, E.-H., Chan, T.K., Osipowicz, T., Foo, Y.-L., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2008). Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 128-129. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530830 9781424416158 http://scholarbank.nus.edu.sg/handle/10635/84127 000256564900059 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/VTSA.2008.4530830
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Chan, T.K. Osipowicz, T. Foo, Y.-L. Tung, C.H. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wang, G.H. Toh, E.-H. Chan, T.K. Osipowicz, T. Foo, Y.-L. Tung, C.H. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
spellingShingle	Wang, G.H. Toh, E.-H. Chan, T.K. Osipowicz, T. Foo, Y.-L. Tung, C.H. Lo, G.-Q. Samudra, G. Yeo, Y.-C. Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
author_sort	Wang, G.H.
title	Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
title_short	Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
title_full	Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
title_fullStr	Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
title_full_unstemmed	Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
title_sort	realization of silicon-germanium-tin (sigesn) source/ drain stressors by sn implant and solid phase epitaxy for strain engineering in sige channel p-mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84127
_version_	1781784423704821760

Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs

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