(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs

(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs

10.1109/VLSI-TSA.2013.6545607

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Bibliographic Details
Main Authors: Zhan, C., Wang, W., Gong, X., Guo, P., Liu, B., Yang, Y., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83286
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83286

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