Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack

Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack

10.1143/JJAP.47.2548

Saved in:
Bibliographic Details
Main Authors: Li, R., Sung-Joo, L.E.E., Hong, M.-H., Chi, D.-Z., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ge MOSFET
Germanide
High-k dielectric
Laser annealing
Schottky
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82941
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82941

Similar Items