Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack

Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack

10.1143/JJAP.47.2548

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Bibliographic Details
Main Authors: Li, R., Sung-Joo, L.E.E., Hong, M.-H., Chi, D.-Z., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ge MOSFET
Germanide
High-k dielectric
Laser annealing
Schottky
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82941
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Institution: National University of Singapore
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