Enhanced ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal

by Wong, A.S.W., Ho, G.W., Chi, D.Z.
Published 2014

Understanding the growth of Β-FeSi2 films for photovoltaic applications: A study using transmission electron microscopy

by Wong, A.S.W., Ho, G.W., Chi, D.Z.
Published 2014

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

by Lee, R.T.P., Chi, D.Z., Yeo, Y.-C.
Published 2014

Direct observations of the nucleation and growth of NiSi 2 on Si (001)

by Yeadon, M., Nath, R., Boothroyd, C.B., Chi, D.Z.
Published 2014

Effects of prolonged annealing on NiSi at low temperature (500°C)

by Anisur, M.R., Osipowicz, T., Chi, D.Z., Wang, W.D.
Published 2014

Observation of a new kinetics to form Ni3Si2 and Ni31Si12 suicides at low temperature (200°C)

by Rahman, Md..A., Osipowicz, T., Chi, D.Z., Wang, W.D.
Published 2014

Characterization of high quality continuous GaN films grown on Si-doped cracked GaN template

by Soh, C.B., Zhang, J., Chi, D.Z., Chua, S.J.
Published 2014

Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate

by Gao, F., Li, R., Chi, D.Z., Balakumar, S., Lee, S.J.
Published 2014

On the morphological changes of Ni- and Ni(Pt)-silicides

by Lee, P.S., Pey, K.L., Mangelinck, D., Chi, D.Z., Osipowicz, T.
Published 2014

NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

by Lim, P.S.Y., Chi, D.Z., Zhou, Q., Yeo, Y.-C.
Published 2014

Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy

by Soh, C.B., Liu, W., Chua, S.J., Tripathy, S., Chi, D.Z.
Published 2014

Comparative study of trap levels observed in undoped and Si-doped GaN

by Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J.
Published 2014

GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation

by Gao, F., Lee, S.J., Chi, D.Z., Balakumar, S., Kwong, D.-L.
Published 2014

The influence of V defects on luminescence properties of AlInGaN quaternary alloys

by Soh, C.B., Chua, S.J., Tripathy, S., Liu, W., Chi, D.Z.
Published 2014

Identification of deep levels in π-GaN epilayers

by Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J.
Published 2014

Inverted hexagonal pits formation in AlInGaN epilayer

by Soh, C.B., Liu, W., Chua, S.J., Tripathy, S., Chi, D.Z.
Published 2014

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

by Ya Lim, P.S., Chi, D.Z., Lo, G.Q., Yeo, Y.C.
Published 2014

Phase and texture of Er-germanide formed on Ge(001) through a solid-state reaction

by Liew, S.L., Balakrisnan, B., Ho, C.S., Thomas, O., Chi, D.Z.
Published 2014

Evaluation of PECVD deposited boron nitride as copper diffusion barrier on porous low-k materials

by Liu, J., Wang, W.D., Wang, L., Chi, D.Z., Loh, K.P.
Published 2014

Micro-Raman spectroscopic investigation of NiSi films formed on BF2 +-, B+-and non-implanted (100) Si substrates

by Donthu, S.K., Chi, D.Z., Wong, A.S.W., Chua, S.J., Tripathy, S.
Published 2014