GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation

GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation

10.1063/1.2749840

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Bibliographic Details
Main Authors: Gao, F., Lee, S.J., Chi, D.Z., Balakumar, S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82396
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82396

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