GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation

10.1063/1.2749840

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Main Authors: Gao, F., Lee, S.J., Chi, D.Z., Balakumar, S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82396
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-823962023-10-27T08:28:37Z GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation Gao, F. Lee, S.J. Chi, D.Z. Balakumar, S. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2749840 Applied Physics Letters 90 25 - APPLA 2014-10-07T04:28:52Z 2014-10-07T04:28:52Z 2007 Article Gao, F., Lee, S.J., Chi, D.Z., Balakumar, S., Kwong, D.-L. (2007). GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation. Applied Physics Letters 90 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2749840 00036951 http://scholarbank.nus.edu.sg/handle/10635/82396 000247468900067 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.2749840
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Gao, F.
Lee, S.J.
Chi, D.Z.
Balakumar, S.
Kwong, D.-L.
format Article
author Gao, F.
Lee, S.J.
Chi, D.Z.
Balakumar, S.
Kwong, D.-L.
spellingShingle Gao, F.
Lee, S.J.
Chi, D.Z.
Balakumar, S.
Kwong, D.-L.
GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
author_sort Gao, F.
title GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
title_short GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
title_full GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
title_fullStr GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
title_full_unstemmed GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
title_sort gaas metal-oxide-semiconductor device with hfo2/tan gate stack and thermal nitridation surface passivation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82396
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