TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode

TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode

10.1109/LED.2003.821590

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Bibliographic Details
Main Authors: Lee, S., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Hafnium oxide
High-K gate stack
Metal gate electrode
Reliability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83149
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83149

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