TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode

10.1109/LED.2003.821590

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Main Authors:	Lee, S., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Hafnium oxide High-K gate stack Metal gate electrode Reliability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83149
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83149
record_format	dspace
spelling	sg-nus-scholar.10635-831492024-11-10T21:13:23Z TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode Lee, S. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Hafnium oxide High-K gate stack Metal gate electrode Reliability 10.1109/LED.2003.821590 IEEE Electron Device Letters 25 1 13-15 EDLED 2014-10-07T04:37:50Z 2014-10-07T04:37:50Z 2004-01 Article Lee, S., Kwong, D.L. (2004-01). TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode. IEEE Electron Device Letters 25 (1) : 13-15. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.821590 07413106 http://scholarbank.nus.edu.sg/handle/10635/83149 000187735500005 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Hafnium oxide High-K gate stack Metal gate electrode Reliability
spellingShingle	Hafnium oxide High-K gate stack Metal gate electrode Reliability Lee, S. Kwong, D.L. TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
description	10.1109/LED.2003.821590
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, S. Kwong, D.L.
format	Article
author	Lee, S. Kwong, D.L.
author_sort	Lee, S.
title	TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
title_short	TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
title_full	TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
title_fullStr	TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
title_full_unstemmed	TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
title_sort	tddb and polarity-dependent reliability of high-quality, ultrathin cvd hfo 2 gate stack with tan gate electrode
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83149
_version_	1821193054777769984

TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode

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