HfO2 gate dielectrics for future generation of CMOS device application

HfO2 gate dielectrics for future generation of CMOS device application

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Bibliographic Details
Main Authors: Yu, H.Y., Kang, J.F., Ren, C., Li, M.F., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Hafnium aluminates
HfN
HfO2
High-k gate dielectrics
Metal gate electrode
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82446
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82446

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