Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications

• Main Authors: Lee, S.J., Choi, C.H., Kamath, A., Clark, R., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Chemical vapor deposition (CVD); Hafnium oxide (HfO2); High-k gate dielectric
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82039
• Institution: National University of Singapore

10.1109/LED.2002.807712