Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications

10.1109/LED.2002.807712

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Bibliographic Details
Main Authors:	Lee, S.J., Choi, C.H., Kamath, A., Clark, R., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Chemical vapor deposition (CVD) Hafnium oxide (HfO2) High-k gate dielectric
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82039
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82039
record_format	dspace
spelling	sg-nus-scholar.10635-820392024-11-10T21:13:25Z Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications Lee, S.J. Choi, C.H. Kamath, A. Clark, R. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Chemical vapor deposition (CVD) Hafnium oxide (HfO2) High-k gate dielectric 10.1109/LED.2002.807712 IEEE Electron Device Letters 24 2 105-107 EDLED 2014-10-07T04:24:41Z 2014-10-07T04:24:41Z 2003-02 Article Lee, S.J., Choi, C.H., Kamath, A., Clark, R., Kwong, D.L. (2003-02). Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications. IEEE Electron Device Letters 24 (2) : 105-107. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807712 07413106 http://scholarbank.nus.edu.sg/handle/10635/82039 000182516600018 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Chemical vapor deposition (CVD) Hafnium oxide (HfO2) High-k gate dielectric
spellingShingle	Chemical vapor deposition (CVD) Hafnium oxide (HfO2) High-k gate dielectric Lee, S.J. Choi, C.H. Kamath, A. Clark, R. Kwong, D.L. Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
description	10.1109/LED.2002.807712
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, S.J. Choi, C.H. Kamath, A. Clark, R. Kwong, D.L.
format	Article
author	Lee, S.J. Choi, C.H. Kamath, A. Clark, R. Kwong, D.L.
author_sort	Lee, S.J.
title	Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
title_short	Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
title_full	Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
title_fullStr	Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
title_full_unstemmed	Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
title_sort	characterization and reliability of dual high-k gate dielectric stack (poly-si-hfo2-sio2) prepared by in situ rtcvd process for system-on-chip applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82039
_version_	1821206956086394880

Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications

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