HfO2 gate dielectrics for future generation of CMOS device application

by Yu, H.Y., Kang, J.F., Ren, C., Li, M.F., Kwong, D.L.
Published 2014

Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage

by Gao, Bin, Yu, Hongyu, Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Z. R., Yu, B.
Published 2013

Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process

by Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L.
Published 2014

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack

by Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L.
Published 2014

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

by Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F.
Published 2014

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

by Gao, Bin, Yu, Hongyu, Lu, Y., Chen, B., Fang, Z., Fu, Y. H., Yang, J. Q., Liu, L. F., Liu, X. Y., Kang, J. F.
Published 2013

Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation

by Liu, X.Y., Du, G., Xia, Z.L., Kang, J.F., Wang, Y., Han, R.Q., Yu, H.Y., Li, M.-F., Kwong, D.L.
Published 2014

Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications

by Kang, J.F., Yu, H.Y., Ren, C., Sa, N., Yang, H., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Published 2014

A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate

by Ren, C., Yu, H.Y., Kang, J.F., Wang, X.P., Ma, H.H.H., Yeo, Y.-C., Chan, D.S.H., Li, M.-F., Kwong, D.-L.
Published 2014

Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering

by Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L.
Published 2014

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps

by Sa, N., Kang, J.F., Yang, H., Liu, X.Y., He, Y.D., Han, R.Q., Ren, C., Yu, H.Y., Chan, D.S.H., Kwong, D.-L.
Published 2014

Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process

by Kang, J.F., Yu, H.Y., Ren, C., Yang, H., Sa, N., Liu, X.Y., Han, R.Q., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
Published 2014

Fermi pinning-induced thermal instability of metal-gate work functions

by Yu, H.Y., Ren, C., Yeo, Y.-C., Kang, J.F., Wang, X.P., Ma, H.H.H., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
Published 2014

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

by Kang, J.F., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Wang, Y.Y., Kwong, D.-L.
Published 2014

Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

by Chen, Y. S., Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Y. Y., Wu, L., Wang, J. Y., Chen, Q., Wang, E. G., Gao, Bin, Yu, Hongyu
Published 2013

A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

by Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.
Published 2013

Strain-induced very low noise RF MOSFETs on flexible plastic substrate

by Kao, H.L., Chin, A., Hung, B.F., Lai, J.M., Lee, C.F., Li, M.-F., Samudra, G.S., Zhu, C., Xia, Z.L., Liu, X.Y., Kang, J.F.
Published 2014

Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

by Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L.
Published 2014

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

by Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Published 2014

Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

by Li, M.F., Yu, H.Y., Hou, Y.T., Kang, J.F., Wang, X.P., Shen, C., Ren, C., Yeo, Y.C., Zhu, C.X., Chan, D.S.H., Chin, A., Kwong, D.L.
Published 2014