Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns

by Tan, K.M., Yoo, W.J., Ma, H.H.H., Li, F., Chan, L.
Published 2014

A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate

by Ren, C., Yu, H.Y., Kang, J.F., Wang, X.P., Ma, H.H.H., Yeo, Y.-C., Chan, D.S.H., Li, M.-F., Kwong, D.-L.
Published 2014

Fermi pinning-induced thermal instability of metal-gate work functions

by Yu, H.Y., Ren, C., Yeo, Y.-C., Kang, J.F., Wang, X.P., Ma, H.H.H., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
Published 2014

Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications

by Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L.
Published 2014