Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

by Yu, H.Y., Li, M.-F., Kwong, D.-L.
Published 2014

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

by Yu, H.Y., Hou, Y.T., Li, M.F., Kwong, D.-L.
Published 2014

Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks

by Hou, Y.T., Li, M.F., Yu, H.Y., Kwong, D.-L.
Published 2014

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

by Duan, T.L, Pan, J.S, Wang, N, Cheng, K, Yu, H.Y
Published 2020

Quantum tunneling and scalability of HfO2 and HfAlO gate stacks

by Hou, Y.T., Li, M.F., Yu, H.Y., Jin, Y., Kwong, D.-L.
Published 2014

HfO2 gate dielectrics for future generation of CMOS device application

by Yu, H.Y., Kang, J.F., Ren, C., Li, M.F., Kwong, D.L.
Published 2014

Switching model of taox-based nonpolar resistive random access memory

by Tong, X., Wu, W., Liu, Z., Tran, X.A., Yu, H.Y., Yeo, Y.-C.
Published 2014

Self-selection unipolar HfOx-Based RRAM

by Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
Published 2014

A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

by Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
Published 2014

Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime

by Li, M.F., Chen, G., Shen, C., Wang, X.P., Yu, H.Y., Yeo, Y.-C., Kwong, D.L.
Published 2014

An indium-free transparent resistive switching random access memory

by Zheng, K., Sun, X.W., Zhao, J.L., Wang, Y., Yu, H.Y., Demir, H.V., Teo, K.L.
Published 2014

Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric

by Shen, C., Li, M.F., Yu, H.Y., Wang, X.P., Yeo, Y.-C., Chan, D.S.H., Kwong, D.-L.
Published 2014

Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process

by Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L.
Published 2014

Some issues in advanced CMOS gate stack performance and reliability

by Li, M.-F., Wang, X.P., Shen, C., Yang, J.J., Chen, J.D., Yu, H.Y., Zhu, C., Huang, D.
Published 2014

Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics

by Yang, J.-J., Wang, X.-P., Zhu, C.-X., Li, M.-F., Yu, H.-Y., Loh, W.-Y., Kwong, D.-L.
Published 2014

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack

by Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L.
Published 2014

Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration scheme

by Wang, X.P., Yu, H.Y., Yeo, Y.-C., Li, M.-F., Chang, S.-Z., Cho, H.-J., Kubicek, S., Wouters, D., Groeseneken, G., Biesemans, S.
Published 2014

Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs

by Shen, C., Yu, H.Y., Wang, X.P., Li, M.-F., Yeo, Y.-C., Chan, D.S.H., Bera, K.L., Kwong, D.L.
Published 2014

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

by Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F.
Published 2014

Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

by Yu, H.Y., Li, M.F., Lauwers, A., Kittl, J.A., Singanamalla, R., Veloso, A., Hoffmann, T., De Meyer, K., Jurczak, M., Absil, P., Biesemans, S.
Published 2014