Switching model of taox-based nonpolar resistive random access memory

by Tong, X., Wu, W., Liu, Z., Tran, X.A., Yu, H.Y., Yeo, Y.-C.
Published 2014

A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

by Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
Published 2014

Self-selection unipolar HfOx-Based RRAM

by Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
Published 2014

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

by Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F.
Published 2014

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

by Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Published 2014

High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

by Tran, X.A., Gao, B., Kang, J.F., Wu, L., Wang, Z.R., Fang, Z., Pey, K.L., Yeo, Y.C., Du, A.Y., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Published 2014

A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

by Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F.
Published 2014

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

by Tran, X.A., Gao, B., Kang, J.F., Wu, X., Wu, L., Fang, Z., Wang, Z.R., Pey, K.L., Yeo, Y.C., Du, A.Y., Liu, M., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Published 2014