Self-selection unipolar HfOx-Based RRAM

Self-selection unipolar HfOx-Based RRAM

10.1109/TED.2012.2223821

Saved in:
Bibliographic Details
Main Authors: Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Bipolar
high resistance switching (HRS)
low resistance switching (LRS)
resistive switching (RS)
unipolar
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83008
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83008

Similar Items