A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

10.1109/LED.2010.2099205

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Bibliographic Details
Main Authors: Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
HfOx
resistive random access memory (RRAM)
unipolar resistive switching (RS)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81875
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81875

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