A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

• Main Authors: Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: HfOx; resistive random access memory (RRAM); unipolar resistive switching (RS)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81875
• Institution: National University of Singapore

10.1109/LED.2010.2099205