Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

• Main Authors: Li, H. K., Chen, T. P., Hu, S. G., Liu, P., Liu, Y., Lee, P. S., Wang, X. P., Li, H. Y., Lo, G. Q.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Multilevel high-resistance states; Resistive switching random access memory (RRAM); Impedance spectroscopy
• Online Access: https://hdl.handle.net/10356/81371; http://hdl.handle.net/10220/39539
• Institution: Nanyang Technological University

Multilevel high resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high resistance states. It is shown that the high resistance states can be described with an equ...