Influence of the excess Al content on memory behaviors of Worm devices based on sputtered Al-rich aluminum oxide thin films

by Liu, Z., Liu, P., Li, H. K., Chen, T. P.
Published 2015

Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

by Li, H. K., Chen, T. P., Hu, S. G., Liu, P., Liu, Y., Lee, P. S., Wang, X. P., Li, H. Y., Lo, G. Q.
Published 2016