Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires

بواسطة Yao, D., Zhang, G., Lo, G.-Q., Li, B.
منشور في 2014

Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer

بواسطة Zang, H., Wang, J., Lo, G.Q., Lee, S.J.
منشور في 2014

Thermoelectric performance of silicon nanowires

بواسطة Zhang, G., Zhang, Q., Bui, C.-T., Lo, G.-Q., Li, B.
منشور في 2014

Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technology

بواسطة Li, Y., Buddharaju, K., Singh, N., Lo, G.Q., Lee, S.J.
منشور في 2014

Silicon nanowires thermoelectric devices

بواسطة Li, Y., Buddharaju, K., Singh, N., Lo, G.Q., Lee, S.J.
منشور في 2014

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

بواسطة Ya Lim, P.S., Chi, D.Z., Lo, G.Q., Yeo, Y.C.
منشور في 2014

Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1-xO/ZnO heterostructure

بواسطة Ye, J.D., Lo, G.Q., Gu, S.L., Teo, K.L.
منشور في 2014

Silicon nanowire forthermoelectric applications: Effects of contact resistance

بواسطة Li, Y., Buddharaju, K., Singh, N., Lo, G.Q., Lee, S.J.
منشور في 2014

Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory

بواسطة Fu, J., Singh, N., Zhu, C., Lo, G.-Q., Kwong, D.-L.
منشور في 2014

Silicon vertical-nano-wire based photovaltaic device

بواسطة Wang, J., Li, Z.H., Singh, N., Lo, G.Q., Lee, S.J.
منشور في 2014

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack

بواسطة Peng, J.W., Singh, N., Lo, G.Q., Kwong, D.L., Lee, S.J.
منشور في 2014

Tensile-strained germanium CMOS integration on silicon

بواسطة Zang, H., Loh, W.Y., Ye, J.D., Lo, G.Q., Cho, B.J.
منشور في 2014

Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture

بواسطة Wong, H.-S., Tan, L.-H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
منشور في 2014

Si-nanowire TAHOS TaN/AI2O3/HfO2/SiO 2/Si nonvolatile memory cell

بواسطة Fu, J., Singh, N., Yang, B., Zhu, C.X., Lo, G.Q., Kwong, D.L.
منشور في 2014

Substrate effects on resonant frequency of silicon-based RF on-chip MIM capacitor

بواسطة Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Li, M.-F., Kwong, D.-L.
منشور في 2014

Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

بواسطة Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L.
منشور في 2014

Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process

بواسطة Peng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J.
منشور في 2014

Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region

بواسطة Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
منشور في 2014

I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering

بواسطة Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
منشور في 2014

High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering

بواسطة Zang, H., Lee, S., Yu, M., Loh, W.Y., Wang, J., Lo, G.-Q., Kwong, D.-L.
منشور في 2014