Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region

Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region

10.1109/TED.2007.904988

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Bandgap
Impact-ionization
Impact-ionization MOS (I-MOS)
Silicon carbon
Silicon germanium
Strain
Subthreshold swing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83074
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83074

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