Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region
10.1109/TED.2007.904988
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2014
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sg-nus-scholar.10635-830742023-10-29T20:57:58Z Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Bandgap Impact-ionization Impact-ionization MOS (I-MOS) Silicon carbon Silicon germanium Strain Subthreshold swing 10.1109/TED.2007.904988 IEEE Transactions on Electron Devices 54 10 2778-2785 IETDA 2014-10-07T04:36:57Z 2014-10-07T04:36:57Z 2007-10 Article Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2007-10). Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region. IEEE Transactions on Electron Devices 54 (10) : 2778-2785. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.904988 00189383 http://scholarbank.nus.edu.sg/handle/10635/83074 000249904100027 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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ScholarBank@NUS |
| topic |
Bandgap Impact-ionization Impact-ionization MOS (I-MOS) Silicon carbon Silicon germanium Strain Subthreshold swing |
| spellingShingle |
Bandgap Impact-ionization Impact-ionization MOS (I-MOS) Silicon carbon Silicon germanium Strain Subthreshold swing Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C. Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region |
| description |
10.1109/TED.2007.904988 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C. |
| format |
Article |
| author |
Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C. |
| author_sort |
Toh, E.-H. |
| title |
Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region |
| title_short |
Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region |
| title_full |
Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region |
| title_fullStr |
Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region |
| title_full_unstemmed |
Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region |
| title_sort |
strain and materials engineering for the i-mos transistor with an elevated impact-ionization region |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83074 |
| _version_ |
1781784293583880192 |