A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performance

A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performance

10.1109/LED.2007.914100

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Device optimization
Impact ionization
Impact-ionization MOS (I-MOS)
Subthreshold swing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81860
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81860

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