Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process

Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process

10.1143/JJAP.47.3077

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
I-MOS
Impact-ionization
Optimization
Subthreshold swing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55628
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/55628

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