Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process
10.1143/JJAP.47.3077
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2014
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sg-nus-scholar.10635-556282023-10-26T20:10:46Z Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process Toh, E.-H. Wang, G.H. Chan, L. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING I-MOS Impact-ionization Optimization Subthreshold swing 10.1143/JJAP.47.3077 Japanese Journal of Applied Physics 47 4 PART 2 3077-3080 JAPND 2014-06-17T02:45:18Z 2014-06-17T02:45:18Z 2008-04-25 Article Toh, E.-H., Wang, G.H., Chan, L., Samudra, G.S., Yeo, Y.-C. (2008-04-25). Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process. Japanese Journal of Applied Physics 47 (4 PART 2) : 3077-3080. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.3077 00214922 http://scholarbank.nus.edu.sg/handle/10635/55628 000255449100165 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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ScholarBank@NUS |
| topic |
I-MOS Impact-ionization Optimization Subthreshold swing |
| spellingShingle |
I-MOS Impact-ionization Optimization Subthreshold swing Toh, E.-H. Wang, G.H. Chan, L. Samudra, G.S. Yeo, Y.-C. Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process |
| description |
10.1143/JJAP.47.3077 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Toh, E.-H. Wang, G.H. Chan, L. Samudra, G.S. Yeo, Y.-C. |
| author_sort |
Toh, E.-H. |
| title |
Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process |
| title_short |
Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process |
| title_full |
Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process |
| title_fullStr |
Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process |
| title_full_unstemmed |
Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process |
| title_sort |
device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/55628 |
| _version_ |
1781412162052292608 |