Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

10.1109/LED.2008.2011503

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Bibliographic Details
Main Authors: Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate-all-around (GAA)
Nanowire
Nonvolatile memory
Polycrystalline silicon (poly-Si)
SONOS
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57087
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/57087

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