Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory

Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory

10.1109/LED.2009.2019254

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Bibliographic Details
Main Authors: Fu, J., Singh, N., Zhu, C., Lo, G.-Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate-all-around (GAA)
High-κ
Nanowire
Nonvolatile memory
TaN/Al2O3/HfO2/SiO2/Si (TAHOS)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82550
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82550

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