Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory

Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory

10.1109/LED.2009.2019254

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Bibliographic Details
Main Authors: Fu, J., Singh, N., Zhu, C., Lo, G.-Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate-all-around (GAA)
High-κ
Nanowire
Nonvolatile memory
TaN/Al2O3/HfO2/SiO2/Si (TAHOS)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82550
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Institution: National University of Singapore
id sg-nus-scholar.10635-82550
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spelling sg-nus-scholar.10635-825502024-11-10T18:36:48Z Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory Fu, J. Singh, N. Zhu, C. Lo, G.-Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Gate-all-around (GAA) High-κ Nanowire Nonvolatile memory TaN/Al2O3/HfO2/SiO2/Si (TAHOS) 10.1109/LED.2009.2019254 IEEE Electron Device Letters 30 6 662-664 EDLED 2014-10-07T04:30:42Z 2014-10-07T04:30:42Z 2009 Article Fu, J., Singh, N., Zhu, C., Lo, G.-Q., Kwong, D.-L. (2009). Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory. IEEE Electron Device Letters 30 (6) : 662-664. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2019254 07413106 http://scholarbank.nus.edu.sg/handle/10635/82550 000266409200026 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Gate-all-around (GAA)
High-κ
Nanowire
Nonvolatile memory
TaN/Al2O3/HfO2/SiO2/Si (TAHOS)
spellingShingle Gate-all-around (GAA)
High-κ
Nanowire
Nonvolatile memory
TaN/Al2O3/HfO2/SiO2/Si (TAHOS)
Fu, J.
Singh, N.
Zhu, C.
Lo, G.-Q.
Kwong, D.-L.
Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
description 10.1109/LED.2009.2019254
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Fu, J.
Singh, N.
Zhu, C.
Lo, G.-Q.
Kwong, D.-L.
format Article
author Fu, J.
Singh, N.
Zhu, C.
Lo, G.-Q.
Kwong, D.-L.
author_sort Fu, J.
title Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
title_short Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
title_full Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
title_fullStr Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
title_full_unstemmed Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
title_sort integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82550
_version_ 1821221136668557312

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