Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
10.1109/LED.2009.2019254
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82550 |
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| Institution: | National University of Singapore |