High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics

High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics

10.1109/LED.2003.820664

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Bibliographic Details
Main Authors: Ding, S.-J., Hu, H., Lim, H.F., Kim, S.J., Yu, X.F., Zhu, C., Li, M.F., Cho, B.J., Chan, D.S.H., Rustagi, S.C., Yu, M.B., Chin, A., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Atomic layer deposition (ALD)
HfO2-Al2O3 laminate
High-κ
Metal-insulator-metal (MIM) capacitor
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82465
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82465

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