RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

• Main Authors: Ding, S.-J., Hu, H., Zhu, C., Kim, S.J., Yu, X., Li, M.-F., Cho, B.J., Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Atomic layer-deposit (ALD); HfO2-Al2O3 laminate; Metal-insulator-metal (MIM) capacitor; Radio frequency (RF); Reliability
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82983
• Institution: National University of Singapore

10.1109/TED.2004.827367