RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

10.1109/TED.2004.827367

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Main Authors:	Ding, S.-J., Hu, H., Zhu, C., Kim, S.J., Yu, X., Li, M.-F., Cho, B.J., Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Atomic layer-deposit (ALD) HfO2-Al2O3 laminate Metal-insulator-metal (MIM) capacitor Radio frequency (RF) Reliability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82983
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-829832023-10-30T07:10:46Z RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, S.-J. Hu, H. Zhu, C. Kim, S.J. Yu, X. Li, M.-F. Cho, B.J. Chan, D.S.H. Yu, M.B. Rustagi, S.C. Chin, A. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Atomic layer-deposit (ALD) HfO2-Al2O3 laminate Metal-insulator-metal (MIM) capacitor Radio frequency (RF) Reliability 10.1109/TED.2004.827367 IEEE Transactions on Electron Devices 51 6 886-894 IETDA 2014-10-07T04:35:51Z 2014-10-07T04:35:51Z 2004-06 Article Ding, S.-J., Hu, H., Zhu, C., Kim, S.J., Yu, X., Li, M.-F., Cho, B.J., Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Kwong, D.-L. (2004-06). RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications. IEEE Transactions on Electron Devices 51 (6) : 886-894. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.827367 00189383 http://scholarbank.nus.edu.sg/handle/10635/82983 000221660100009 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Atomic layer-deposit (ALD) HfO2-Al2O3 laminate Metal-insulator-metal (MIM) capacitor Radio frequency (RF) Reliability
spellingShingle	Atomic layer-deposit (ALD) HfO2-Al2O3 laminate Metal-insulator-metal (MIM) capacitor Radio frequency (RF) Reliability Ding, S.-J. Hu, H. Zhu, C. Kim, S.J. Yu, X. Li, M.-F. Cho, B.J. Chan, D.S.H. Yu, M.B. Rustagi, S.C. Chin, A. Kwong, D.-L. RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
description	10.1109/TED.2004.827367
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ding, S.-J. Hu, H. Zhu, C. Kim, S.J. Yu, X. Li, M.-F. Cho, B.J. Chan, D.S.H. Yu, M.B. Rustagi, S.C. Chin, A. Kwong, D.-L.
format	Article
author	Ding, S.-J. Hu, H. Zhu, C. Kim, S.J. Yu, X. Li, M.-F. Cho, B.J. Chan, D.S.H. Yu, M.B. Rustagi, S.C. Chin, A. Kwong, D.-L.
author_sort	Ding, S.-J.
title	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
title_short	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
title_full	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
title_fullStr	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
title_full_unstemmed	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
title_sort	rf, dc, and reliability characteristics of ald hfo2-al2o3 laminate mim capacitors for si rf ic applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82983
_version_	1781784267516280832

RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

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