RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

10.1109/TED.2004.827367

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Bibliographic Details
Main Authors:	Ding, S.-J., Hu, H., Zhu, C., Kim, S.J., Yu, X., Li, M.-F., Cho, B.J., Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Atomic layer-deposit (ALD) HfO2-Al2O3 laminate Metal-insulator-metal (MIM) capacitor Radio frequency (RF) Reliability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82983
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Institution:	National University of Singapore

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