Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

10.1109/LMWC.2003.818532

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Bibliographic Details
Main Authors: Yang, M.Y., Huang, C.H., Chin, A., Zhu, C., Cho, B.J., Li, M.F., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
Subjects:
Capacitor
Dielectric constant
Frequency dependence
High κ
MIM
RF
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84425
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84425

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