Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

• Main Authors: Yang, M.Y., Huang, C.H., Chin, A., Zhu, C., Cho, B.J., Li, M.F., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Others
• Published: 2014
• Subjects: Capacitor; Dielectric constant; Frequency dependence; High κ; MIM; RF
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84425
• Institution: National University of Singapore

10.1109/LMWC.2003.818532