Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics
10.1109/LMWC.2003.818532
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2014
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sg-nus-scholar.10635-844252024-11-14T01:24:54Z Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics Yang, M.Y. Huang, C.H. Chin, A. Zhu, C. Cho, B.J. Li, M.F. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Capacitor Dielectric constant Frequency dependence High κ MIM RF 10.1109/LMWC.2003.818532 IEEE Microwave and Wireless Components Letters 13 10 431-433 IMWCB 2014-10-07T04:52:32Z 2014-10-07T04:52:32Z 2003-10 Others Yang, M.Y., Huang, C.H., Chin, A., Zhu, C., Cho, B.J., Li, M.F., Kwong, D.-L. (2003-10). Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics. IEEE Microwave and Wireless Components Letters 13 (10) : 431-433. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.818532 15311309 http://scholarbank.nus.edu.sg/handle/10635/84425 000185719300003 Scopus |
| institution |
National University of Singapore |
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NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
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ScholarBank@NUS |
| topic |
Capacitor Dielectric constant Frequency dependence High κ MIM RF |
| spellingShingle |
Capacitor Dielectric constant Frequency dependence High κ MIM RF Yang, M.Y. Huang, C.H. Chin, A. Zhu, C. Cho, B.J. Li, M.F. Kwong, D.-L. Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics |
| description |
10.1109/LMWC.2003.818532 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Yang, M.Y. Huang, C.H. Chin, A. Zhu, C. Cho, B.J. Li, M.F. Kwong, D.-L. |
| format |
Others |
| author |
Yang, M.Y. Huang, C.H. Chin, A. Zhu, C. Cho, B.J. Li, M.F. Kwong, D.-L. |
| author_sort |
Yang, M.Y. |
| title |
Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics |
| title_short |
Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics |
| title_full |
Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics |
| title_fullStr |
Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics |
| title_full_unstemmed |
Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics |
| title_sort |
very high density rf mim capacitors (17 ff/μm2) using high-κ al2o3 doped ta2o5 dielectrics |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84425 |
| _version_ |
1821201680751919104 |