Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias
Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel...
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Main Authors: | , |
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格式: | Article |
語言: | English |
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2020
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在線閱讀: | https://hdl.handle.net/10356/142599 |
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機構: | Nanyang Technological University |
語言: | English |