Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias

Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel...

全面介紹

Saved in:
書目詳細資料
Main Authors: Lin, Ye, Tan, Chuan Seng
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2020
主題:
在線閱讀:https://hdl.handle.net/10356/142599
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English