Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias

• Main Authors: Lin, Ye, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; MIM Capacitor; ALD Samples
• Online Access: https://hdl.handle.net/10356/142599
• Institution: Nanyang Technological University

Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel emission, and Fowler-Nordheim tunneling have been identified for these samples, respectively. Self-consistent parameters are extracted through the analysis of leakage current conduction mechanisms: (1) optical dielectric constant (1.98-3.69), and (2) Schottky barrier height (1.66-2.21 eV). In terms of leakage current density, the ALD process is preferred over the sputtering process during the fabrication because the sputtered electrodes result in more traps in the vertical dielectric layers.