Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias

Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel...

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Bibliographic Details
Main Authors: Lin, Ye, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/142599
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Institution: Nanyang Technological University
Language: English

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