Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

10.1109/LED.2005.854378

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Bibliographic Details
Main Authors: Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Bypass capacitor
Decoupling capacitor
High-κ dielectric
Metal-insulator-metal (MIM) capacitor
Niobium oxide (Nb2O5)
Radio frequency integrated circuit (RF IC)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82686
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82686

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