Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

• Main Authors: Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Bypass capacitor; Decoupling capacitor; High-κ dielectric; Metal-insulator-metal (MIM) capacitor; Niobium oxide (Nb2O5); Radio frequency integrated circuit (RF IC)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82686
• Institution: National University of Singapore

10.1109/LED.2005.854378